NXP A3T18H400W23SR6 RF Power MOSFET Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V

Gain: 16.8 dB

Technology: Si

Output Power: 71 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.805 GHz to 1.88 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 173 W

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V