Nexperia PMBT3906M,315 BJTs - ທຣານຊິສຕໍເລີຕໍ Bipolar 40 V, 200 mA PNP ທຣານຊິສຕໍສະຫຼຸບສະຫຼຸບ

Width: 1.02 mm

Height: 0.47 mm

Length: 0.62 mm

Technology: Si

Unit Weight: 0.870 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 590 mW

DC Current Gain hFE Max: 60 at 100 uA, 1 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 180

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 165 mV