Nexperia PBSS8510PA,115 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຕີ 100 V, 1 A PNP ທຣານຊິສຕໍເຕີ ລະດັບ VCEsat ຕ່ຳ

Width: 2.1 mm

Height: 0.61 mm

Length: 2.1 mm

Technology: Si

Unit Weight: 8.078 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 285

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 5.2 A

Maximum DC Collector Current: 5.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 250 mV