Nexperia PBSS4240DPN,115 BJTs - ບິໂພລາ ທຣານຊິສຕໍ PBSS4240DPN/SOT457/SC-74

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 1 g

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 300 at 1 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 1.35 A, - 1.1 A

Maximum DC Collector Current: 1.35 A, 1.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 300 mV, 400 mV