Nexperia PBSS306NZ,135 BJTs - ບາຍເປີ Transistors 100 V, 5.1 A NPN ຕົວປ່ຽນຕໍ່ຕໍ່ VCEsat ຕ່ຳ

Width: 3.7 mm

Height: 1.7 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 103.700 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 5.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 215 mV