Nexperia PBSS305NX-QX BJTs - ບິໂພລາ ທຣານຊິສຕໍ PBSS305NX-Q/SOT89/MPT3

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 4.6 A

Maximum DC Collector Current: 9.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 70 at 5 A, 2 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 210 mV