Nexperia PBSS304ND,115 BJTs - ບາຍໂປລາ ທຣານຊິສຕໍ PBSS304ND/SOT457/SC-74

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 11.800 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.5 W

DC Current Gain hFE Max: 240 at 500 mA, 2 V

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 240 at 500 mA, 2 V, 190 at 1 A, 2 V, 115 at 2 A, 2 V, 70 at 3 A, 2 V, 45 at 4 A, 2 V, 35 at 5 A, 2 V, 25 at 6 A, 2 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 400 mV