Nexperia PBSS302NZ,135 BJTs - ບາຍໂປລາ ທຣານຊິສຕໍເຣີ PBSS302NZ/SOT223/SC-73

Width: 3.7 mm

Height: 1.7 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 300 at 500 mA, 2 V

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 5.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 250 at 2 A, 2 V, 200 at 4 A, 2 V, 200 at 7 A, 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 170 mV