Nexperia PBSS302NX,115 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ 20 V, 5.3 A NPN ທຣານຊິສຕໍເຣີ ລະດັບ VCEsat ຕ່ຳ

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 41.052 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 300 at 500 mA, 2 V

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 5.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 250 at 2 A, 2 V, 200 at 4 A, 2 V, 200 at 6 A, 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 140 mV