Nexperia PBHV9540Z-QX BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ 600 V, 0.5 A PNP ທຣານຊິສຕໍເຣີແຮງດັນຕໍ່ຕ່ຳ VCEsat

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.45 W

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 500 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 65 at - 500 mA, - 10 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 180 mV