Nexperia NX6008NBKR MOSFETs NX6008NBK/SOT23/TO-236AB

Fall Time: 3 ns

Rise Time: 2 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Trench MOSFET

Qg - Gate Charge: 500 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 330 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 1 ns

Typical Turn-Off Delay Time: 5 ns

Id - Continuous Drain Current: 270 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 2.8 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 900 mV