Nexperia GAN039-650NBBHP GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET ໃນຊຸດ CCPAK1212i

Technology: GaN

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Cascode

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Qg - Gate Charge: 30 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 39 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.8 V