Nexperia BF824,215 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣດ BF824/SOT23/TO-236AB

Width: 1.4 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 25 at 1 mA, 10 V

Gain Bandwidth Product fT: 450 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 25 mA

Maximum DC Collector Current: 25 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 30 V