Nexperia BC846BPN-QX BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ 65 V, 100 mA NPN/PNP ທຣານຊິສຕໍເຣີຄວາມຈຳເປັນທົ່ວໄປຄູ່

Technology: Si

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 450 at - 2 mA, -5 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at - 2 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 200 mV