Nexperia BC807-25H-QR BJTs - ບາຍເປີ Transistors BC807-25H-Q/SOT23/TO-236AB

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 540 mW

DC Current Gain hFE Max: 400 at -100 mA, -1 V

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 160 at -100 mA, -1 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV