Nexperia BC55-16PA,115 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ 60 V, 1 A NPN ທຣານຊິສຕໍເຣີພະລັງງານກາງ

Technology: Si

Unit Weight: 7.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 420 mW

DC Current Gain hFE Max: 250 at 150 mA, 2 V

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 63 at 150 mA, 2 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV