Nexperia 2PA1576Q,135 BJTs - ບາຍໂປລາ ທຣານຊິສຕໍເຣີ 2PA1576Q/SOT323/SC-70

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 120 at 1 mA, 6 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V