Microsemi Jantx2N6352 Darlington Transistors Power BJT

Unit Weight: 8.424 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

Emitter- Base Voltage VEBO: 12 V

Maximum Operating Frequency: 10 MHz

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 5

Maximum Collector Cut-off Current: 1 uA

Collector- Emitter Voltage VCEO Max: 80 V