ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Density: 64 Mbit
Package: 48CDFP
Mounting: Surface Mount
Rad Hard: Yes
Cell Type: NOR
Pin Count: 48
Boot Block: Yes
Dose Level: 100 krad
Access Time: 90 ns
Lead Finish: Gold|Nickel
No. of Pins: 48
Timing Type: Asynchronous
Architecture: Sectored
Organization: 4M x 16
Interface Type: Parallel
Memory Density: 64 Mbit
OE Access Time: 25 ns
Number of Words: 4 Mbit
Program Current: 35 mA
Screening Level: Military
Supplier Package: CDFP
Address Bus Width: 22 Bit
Page Read Current: 20 mA
Block Organization: Symmetrical
Maximum Erase Time: 50/Chip ms
Product Dimensions: 19 x 13.44 x 2.78 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 3 V
Supply Voltage Nom: 3.3 V
Max Processing Temp: 260 °C
Programming Voltage: 3 to 3.6 V
Operating Temperature: -55 to 125 °C
Location Of Boot Block: Bottom
Number of Bits per Word: 16 Bit
Maximum Page Access Time: 25 ns
Maximum Programming Time: 10/Word us
Maximum Operating Current: 18 mA
Operating Temperature Max: 125 °C
Operating Temperature Min: -55 °C
Maximum Random Access Time: 90 ns
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 3 V
Typical Operating Supply Voltage: 3.3 V
Erase Suspend/Resume Modes Support: Yes
