Microchip 1N5806US/TR ໄດໂອດຄວາມໄວສູງ / ຄວາມໄວສູງສຸດ, 150 V, 1 A, ເທົ່າຫນຶ່ງ, 975 mV, 25 ns, 35 A, SQ-MELF, 2 ຂາ

No. of Pins: 2

Diode Case Style: SQ-MELF

Diode Configuration: Single

Forward Voltage Max: 975 mV

Forward Surge Current: 35 A

Reverse Recovery Time: 25 ns

Average Forward Current: 1 A

Operating Temperature Max: 175 °C

Repetitive Peak Reverse Voltage: 150 V

Datasheet