ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Fall Time: 7 ns
Rise Time: 14 ns
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 195 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 12 ns
Typical Turn-Off Delay Time: 43 ns
Id - Continuous Drain Current: 56 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 45 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 2 V
