Micro Commercial Components (MCC) SICW100N065H4-BP SiC MOSFETS SiC MOSFET,TO-247-4

Fall Time: 15 ns

Rise Time: 17 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 66 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 166 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8.5 S

Rds On - Drain-Source Resistance: 130 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V