Micro Commercial Components (MCC) SICW025N065H-BP SiC MOSFETS SiC MOSFET,TO-247AB

Fall Time: 15 ns

Rise Time: 50 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 275 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 375 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 107 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 18.2 S

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.1 V