ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Density: 1 Gbit
Package: 64LFBGA
Mounting: Surface Mount
Rad Hard: No
Cell Type: NOR
Pin Count: 64
Boot Block: Yes
Interfaces: Parallel
Access Time: 110 ns
IC Mounting: Surface Mount
No. of Pins: 64
Timing Type: Asynchronous
Architecture: Sectored
Organization: 128M x 8|64M x 16
Interface Type: Parallel
Memory Density: 1 Gbit
OE Access Time: 30 ns
Number of Words: 128|64 Mbit
Program Current: 35 mA
Screening Level: Industrial
Supplier Package: LFBGA
Address Bus Width: 26 Bit
Flash Memory Type: NOR
IC Case / Package: LFBGA
Page Read Current: 12 mA
Block Organization: Symmetrical
Maximum Erase Time: 500/Chip s
Product Dimensions: 11 x 13 x 0.65 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 2.7 V
Supply Voltage Nom: 3 V
Max Processing Temp: 260 °C
Programming Voltage: 2.7 to 3.6 V
Memory Configuration: 128M x 8bit, 64M x 16bit
Operating Temperature: -40 to 85 °C
Location Of Boot Block: Bottom|Top
Number of Bits per Word: 8|16 Bit
Maximum Page Access Time: 25 ns
Maximum Programming Time: 230/Word us
Maximum Operating Current: 40 mA
Maximum Random Access Time: 110 ns
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 2.7 V
Typical Operating Supply Voltage: 3 V
Erase Suspend/Resume Modes Support: Yes
