ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Density: 512 MB
Package: 64LFBGA
Mounting: Surface Mount
Rad Hard: No
Cell Type: NOR
Boot Block: No
Interfaces: Parallel
Access Time: 110 ns
ECC Support: No
Architecture: Sectored
Interface Type: Parallel
Memory Density: 512 KB
OE Access Time: 25 ns
Number of Words: 64, 32 MWords
Program Current: 30 mA
Screening Level: Industrial
Address Bus Width: 26, 25 Bit
Page Read Current: 15 mA
Block Organization: Symmetrical
Maximum Erase Time: 500/Chip s
Supply Voltage Nom: 3.3 V
Operating Temperature: -40 to 85 °C
Number of Bits per Word: 8, 16 Bit
Maximum Page Access Time: 25 ns
Maximum Programming Time: 700000/Chip ms
Maximum Operating Current: 30 mA
Operating Temperature Max: 85 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 110 ns
Simultaneous Read/Write Support: No
Typical Operating Supply Voltage: 3.3000 V
Erase Suspend/Resume Modes Support: Yes
