MACOM NPT2021 GaN FETs DC-2.5GHz 45W ການເພີ່ມ 16.5dB GaN HEMT

Gain: 14.2 dB

Technology: GaN

Unit Weight: 2 g

Output Power: 45 W

Configuration: Single

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Maximum Operating Frequency: 2.5 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 14 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 340 mOhms

Vgs - Gate-Source Breakdown Voltage: 3 V

Vds - Drain-Source Breakdown Voltage: 160 V

Vgs th - Gate-Source Threshold Voltage: - 1.8 V