MACOM GTVA220701FA-V1-R2 GaN FETs RF LDMOS FET

Gain: 22 dB

Technology: GaN

Output Power: 45 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 2.17 GHz

Minimum Operating Frequency: 1.805 GHz

Id - Continuous Drain Current: 13.5 A

Maximum Operating Temperature: + 225 C

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V