MACOM GTRA362002FC-V1-R0 GaN FETs 200W GaN HEMT 48V 3400 to 3600MHz

Gain: 13.5 dB

Technology: GaN

Output Power: 200 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 3.6 GHz

Minimum Operating Frequency: 3.4 GHz

Id - Continuous Drain Current: 4.1 A

Maximum Operating Temperature: + 225 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 150 V