IXYS IXXH40N65C4D1 IGBT Transistors Disc IGBT XPT-GenX4 TO-247AD

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 455 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 110 A

Collector-Emitter Saturation Voltage: 2.3 V

Continuous Collector Current at 25 C: 110 A