IXYS IXTP1N100 MOSFETs 1.5 Amps 1000V 11 Rds

Width: 4.82 mm

Height: 9.15 mm

Length: 10.66 mm

Fall Time: 18 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 54 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 11 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV