ISSI IS34ML04G081-TLE ແຟລັດເມມອຣີ
Density: 4 Gbit
Package: 48TSOP-I
Mounting: Surface Mount
Rad Hard: No
Cell Type: SLC NAND
Pin Count: 48
Boot Block: No
Interfaces: Parallel
Access Time: 25 ns
No. of Pins: 48
Timing Type: Asynchronous
Architecture: Sectored
Organization: 512M x 8
Interface Type: Parallel
Memory Density: 4 Gbit
Number of Words: 512 Mbit
Program Current: 15 mA
Screening Level: Extended Industrial
Supplier Package: TSOP-I
Address Bus Width: 30 Bit
Page Read Current: 15 mA
Block Organization: Symmetrical
Maximum Erase Time: 10/Block ms
Product Dimensions: 18.4 x 12 x 1.05 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 2.7 V
Supply Voltage Nom: 3.3 V
Max Processing Temp: 260 °C
Programming Voltage: 2.7 to 3.6 V
Operating Temperature: -40 to 105 °C
Number of Bits per Word: 8 Bit
Maximum Programming Time: 950/Page us
Maximum Operating Current: 30 mA
Operating Temperature Max: 105 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 70 ns
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 2.7 V
Typical Operating Supply Voltage: 3.3 V
Erase Suspend/Resume Modes Support: No
ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ