Infineon S29GL01GT11FHIV40 ແຟລັດເມມອຣີ
Density: 1 Gbit
Package: 64FBGA
Mounting: Surface Mount
Rad Hard: No
Cell Type: NOR
Pin Count: 64
Boot Block: Yes
Interfaces: Parallel
Access Time: 110 ns
IC Mounting: Surface Mount
No. of Pins: 64
Timing Type: Synchronous
Architecture: Sectored
Organization: 128M x 8bit|64M x 16bit
Interface Type: Parallel
Memory Density: 1 Gbit
OE Access Time: 35 ns
Number of Words: 128|64 MWords
Program Current: 45 mA
Screening Level: Industrial
Supplier Package: FBGA
Address Bus Width: 26 Bit
Flash Memory Type: NOR
Page Read Current: 9 mA
Block Organization: Symmetrical
Maximum Erase Time: 3584/Chip s
Product Dimensions: 13 x 11 x 1 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 2.7 V
Supply Voltage Nom: 3.3 V
Programming Voltage: 2.7 to 3.6 V
Memory Configuration: 128M x 8bit, 64M x 16bit
Operating Temperature: -40 to 85 °C
Location Of Boot Block: Bottom|Top
Number of Bits per Word: 8|16 Bit
Maximum Page Access Time: 25 ns
Maximum Programming Time: 0.75/Word ms
Maximum Operating Current: 60 mA
Operating Temperature Max: 85 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 110 ns
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 2.7 V
Typical Operating Supply Voltage: 3.3 V
Erase Suspend/Resume Modes Support: Yes
ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ

