Infineon IRF9910 Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC

Type: Power MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 2W

Operating temperature: -55 to 150C

Drain to Source voltage: 20V

Continuous drain current: 10A/12A

Current - Drain (Id) (25°C): 10|12A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 11nC@4.5V

Drain to Source on-state resistance: 13.4mOhm/9.3mOhm

On Voltage - (Vgs when Id is applied): 2.55V@250uA

On Resistance - (Rds when Id,Vgs is applied): 13.4mOhm@10A|10V

Input Capacitance - (Ciss when Vds is applied): 900pF@10V