ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Width: 3.9 mm
Height: 1.75 mm
Length: 4.9 mm
Fall Time: 12.5 ns, 12.5 ns
Rise Time: 7.7 ns, 7.7 ns
Technology: Si
Unit Weight: 540 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 29 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.4 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 9.2 ns, 9.2 ns
Typical Turn-Off Delay Time: 31 ns, 31 ns
Id - Continuous Drain Current: 5.1 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10.4 S, 10.4 S
Rds On - Drain-Source Resistance: 65 mOhms, 65 mOhms
Vds - Drain-Source Breakdown Voltage: 55 V
Vgs th - Gate-Source Threshold Voltage: 1 V
