Infineon IPDQ60R016CM8XTMA1 SiC MOSFETS HIGH POWER_NEW

Fall Time: 4.4 ns

Rise Time: 9 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 171 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 29.4 ns

Typical Turn-Off Delay Time: 125.7 ns

Id - Continuous Drain Current: 135 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.7 V