Infineon IMZC120R026M2HXKSA1 SiC MOSFET CoolSiC MOSFET ແບ່ງສ່ວນ 1200V, 26 mohm G2

Fall Time: 7.8 ns

Rise Time: 6.9 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 124 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 289 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 6.5 ns

Typical Turn-Off Delay Time: 14.4 ns

Id - Continuous Drain Current: 69 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 18 S

Rds On - Drain-Source Resistance: 25 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.1 V