Infineon IMYH200R024M1HXKSA1 SiC MOSFETS CoolSiC 2000 V SiC Trench MOSFET ໃນຊຸດ TO-247PLUS-4-HCC

Fall Time: 16 ns

Rise Time: 11 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 137 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 576 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 89 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 33 mOhms

Vds - Drain-Source Breakdown Voltage: 2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V