Infineon IMW120R140M1HXKSA1 SiC MOSFETS CoolSiC 1200V SiC Trench MOSFET ໃນຊຸດ TO247-3

Fall Time: 13 ns

Rise Time: 2.4 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 94 W

Vgs - Gate-Source Voltage: - 7 V, + 23 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 10.4 ns

Id - Continuous Drain Current: 19 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 182 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V