Infineon IMT65R010M2HXUMA1 SiC MOSFET ຊິລິກອນຄາບາຍດ໌ MOSFET

Fall Time: 9.4 ns

Rise Time: 24 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 113 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 681 W

Vgs - Gate-Source Voltage: - 7V, + 23 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 168 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 13.1 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V