Infineon IMDQ75R020M1HXUMA1 SiC MOSFETS SILICON CARBIDE MOSFET

Fall Time: 9 ns

Rise Time: 15 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 67 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 326 W

Vgs - Gate-Source Voltage: - 5 V, + 23 V, - 10 V, + 25 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 81 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 27 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 5.6 V