Infineon IMBG40R025M2HXTMA1 G2 MOSFET SIC-MOS

Fall Time: 7.9 ns

Rise Time: 11.9 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 214 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 12.5 ns

Typical Turn-Off Delay Time: 19.9 ns

Id - Continuous Drain Current: 68 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 36.5 mOhms

Vds - Drain-Source Breakdown Voltage: 400 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V