Infineon IMBG120R053M2HXTMA1 SiC MOSFETS CoolSiC MOSFET 1200 V G2 ໃນຊຸດ TO-263-7

Fall Time: 3 ns

Rise Time: 14 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 30 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 205 W

Vgs - Gate-Source Voltage: - 7 V, + 20 V

Typical Turn-On Delay Time: 2 ns

Typical Turn-Off Delay Time: 4.9 ns

Id - Continuous Drain Current: 41 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.1 s

Rds On - Drain-Source Resistance: 52.6 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.1 V