Infineon IMBG120R030M1HXTMA1 SiC MOSFETS CoolSiC 1200 V SiC Trench MOSFET ໃນຊຸດ TO-263-7

Fall Time: 11 ns

Rise Time: 14 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 63 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 7 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 56 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 14 S

Rds On - Drain-Source Resistance: 41 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.1 V