Infineon IMBF170R650M1XTMA1 SiC MOSFETS CoolSiC 1700 V SiC Trench MOSFET ໃນຊຸດ TO-263-7

Fall Time: 22 ns

Rise Time: 16 ns

Technology: SiC

Unit Weight: 1.600 g

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 88 W

Vgs - Gate-Source Voltage: - 10 V, + 20 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 7.4 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.65 S

Rds On - Drain-Source Resistance: 650 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V