Infineon IGO60R070D1AUMA1 CoolGaN GAN HV

Fall Time: 10 ns

Rise Time: 7 ns

Technology: GaN

Unit Weight: 2.093 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 5.8 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 31 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 70 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 900 mV