Infineon IDM08G120C5XTMA1 ດາຍໂດດ Schottky Silicon Carbide SIC CHIP/DISCRETE

Technology: SiC

Unit Weight: 340 mg

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 8 A

Ir - Reverse Current: 3 uA

Vf - Forward Voltage: 1.65 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 167 W

Ifsm - Forward Surge Current: 70 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 1.2 kV