Infineon IDH12G65C6XKSA1 ດາຍໂອດ Schottky Silicon Carbide SIC DIODES

Technology: SiC

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 27 A

Ir - Reverse Current: 1.2 uA

Vf - Forward Voltage: 1.25 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 81 W

Ifsm - Forward Surge Current: 64 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 650 V