Infineon IDDD12G65C6XTMA1 ດາຍໂອດ Schottky Silicon Carbide Y

Technology: SiC

Unit Weight: 760.180 mg

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 34 A

Ir - Reverse Current: 1.2 uA

Vf - Forward Voltage: 1.25 V

Pd - Power Dissipation: 120 W

Ifsm - Forward Surge Current: 64 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 650 V