Infineon GS-065-030-6-LR-MR GaN FETs CoolGaN Transistor 700 V G4 ສໍາລັບປະສິດຕິພາບສູງສຸດແລະຄວາມເຊື່ອມໄວ້ໄດ້

Fall Time: 5.7 ns

Rise Time: 6.3 ns

Technology: GaN-on-Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 6.7 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Typical Turn-On Delay Time: 8.2 ns

Maximum Operating Frequency: > 1 MHz

Minimum Operating Frequency: 0 Hz

Typical Turn-Off Delay Time: 10.8 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 700 V