Infineon FF23MR12W1M1PB11BPSA1 CoolSiC MOSFET ພະລັງງານຕ່ຳ ງ່າຍ

Fall Time: 12 ns

Rise Time: 10 ns

Technology: SiC

Unit Weight: 24 g

Configuration: Dual

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vf - Forward Voltage: 4.6 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 20 mW

Vgs - Gate-Source Voltage: - 10 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 43.5 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 22.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.45 V